The Center for Research and Education in Nanoscience conducts computational and experimental research in materials science, primarily for energy applications.
The Nanotechnology Education and Research Program of Excellence (POE) is an innovative integration of an academic program, a research agenda, technology transfer to industry, public outreach, and national and international collaboration among researchers.
Learn more about the Program of Excellence in Nanotechnology
Are you looking for a good opportunity to get involved in scientific research? You've found the right place. Our research group is currently looking for new students who are interested in doing research in the field of solid state physics. Areas of research include but are not limited to condensed matter physics, quantum physics, and semiconductor research.
If this type of opportunity seems interesting to you please take time to look around our website at the different projects that are currently being worked on.
If you are interested in doing research with our team or would like further information please contact Dr. Shang-Fen Ren.
Microscopic Phonon Theory of Si/Ge Nanocrystals, Wei Cheng, David T. Marx, Shang-Fen Ren, Review Article, 3 (2), 165-172, Front. Phys. China (2008)
Microscopic Investigations of Thermal Conductivity of Si/Ge Superlattices with Rough Interfaces, S. F. Ren, W. Cheng, and G. Chen, J. Appl. Phys. 100, 103505 (2006).
Erratum: Microscopic Theory of the Low Frequency Raman Modes in Germanium Nanocrystals, W. Cheng, S. F. Ren, and P.Y. Yu, Phys, Rev. B 72, 059901 (2005).
Microscopic Theory of the Low Frequency Raman Modes in Germanium Nanocrystals, W. Cheng, S. F. Ren, and P.Y. Yu, Phys, Rev. B 71, 174305 (2005).
A Microscopic Investigation of Phonon Modes in SiGe Alloy Nanocrystals, S. F. Ren, W. Cheng, and P. Y. Yu, Phys. Rev. B 69, 235327 (2004).
A Theoretical Investigation of the Surface Vibrational Modes in Germanium Nanocrystals, W. Cheng, S. F. Ren, and P. Y. Yu, Phys. Rev. B 68, 193309 (2003).
Calculations of Surface Effects on Phonon Modes and Raman Intensities of Ge Quantum Dots, S. F. Ren and W. Cheng, Phys. Rev. B 66, 205328 (2002).
Calculations on the Size Effects of Raman Intensities of Silicon Quantum Dots, W. Cheng and S. F. Ren, Phys. Rev. B 65, 205305 (2002).
Microscopic Interface Phonon Modes in GaAs Quantum Dots Embedded in AlAs Shells, S. F. Ren and G. Qin, Solid State Communications, 121, 171 (2002).
Effects of Core Size and Shell Thickness on Phonon Modes in GaAs/AlAs Shell Quantum Dots, G. Qin and S. F. Ren, J. Appl. Phys 89 (11), 6037 (2001).
Phonon Modes in InAs QDs, S. F. Ren, D. Y. Lu, and G. Qin, Phys. Rev. B 63. 195315 (2001).